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| Transistor 2SC3829 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 2.8 -0.3 +0.2 s Features q q q q 0.650.15 +0.25 1.5 -0.05 0.650.15 Low noise figure NF. High gain. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 -0.05 1 1.90.2 +0.2 0.95 3 0.4 -0.05 +0.1 2 1.45 1.1 -0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 10 2 80 200 150 -55 ~ +150 Unit V V V mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : 3M s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Transition frequency Collector output capacitance Foward transfer gain Maximum unilateral power gain Noise figure (Ta=25C) Symbol ICBO IEBO VCBO VCEO hFE fT Cob | S21e NF |2 GUM Conditions VCB = 10V, IE = 0 VEB = 2V, IC = 0 IC = 10A, IE = 0 IC = 100A, IB = 0 VCE = 8V, IC = 20mA VCE = 8V, IC = 20mA, f = 800MHz VCB = 10V, IE = 0, f = 1MHz VCE = 8V, IC = 20mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz VCE = 8V, IC = 20mA, f = 800MHz 10 15 10 50 5 150 6 0.7 13.5 15 2 1.2 300 GHz pF dB dB dB min typ max 1 1 Unit A A V V 0 to 0.1 s Absolute Maximum Ratings (Ta=25C) 0.1 to 0.3 0.40.2 0.8 0.16 -0.06 +0.2 +0.1 1 Transistor PC -- Ta 240 24 Ta=25C 200 20 IB=200A 100 2SC3829 IC -- VCE 120 VCE=8V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) Collector current IC (mA) 180A 160A 16 140A 120A 12 100A 80A 60A 4 40A 20A 25C Ta=75C 80 -25C 160 120 60 80 8 40 40 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 IC/IB=10 600 hFE -- IC 12 VCE=8V fT -- IC VCE=8V f=800MHz Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (GHz) 10 30 100 10 400 Ta=75C 300 25C 200 -25C 100 8 Ta=75C 25C -25C 6 4 2 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector current IC (mA) Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25C GUM -- IC Maximum unilateral power gain GUM (dB) 24 VCE=8V f=800MHz Ta=25C 12 NF -- IC VCE=8V (Rg=50) f=800MHz Ta=25C 2.4 2.0 20 10 1.6 16 Noise figure NF (dB) 0.3 1 3 10 30 100 8 1.2 12 6 0.8 8 4 0.4 4 2 0 0.1 0.3 1 3 10 30 100 0 0.1 0 0.1 0.3 10 3 100 300 1000 Collector to base voltage VCB (V) Collector current IC (mA) Collector current IC (mA) 2 |
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